au.\*:("HEMMINGSSON, C")
Results 1 to 6 of 6
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Time-resolved spectroscopy of excitons bound at shallow neutral donors in HVPE GaNMONEMAR, B; PASKOV, P. P; BERGMAN, J. P et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 482-485, issn 0921-4526, 4 p.Conference Paper
Metastability of the UV luminescence in Mg-doped GaN layers grown by MOVPE on quasi-bulk GaN templatesPOZINA, G; MONEMAR, B; USUI, A et al.Physica. B, Condensed matter. 2007, Vol 401-02, pp 302-306, issn 0921-4526, 5 p.Conference Paper
Growth and characterization of thick GaN layers grown by halide vapour phase epitaxy on lattice-matched AlInN templatesHEMMINGSSON, C; BOOTA, M; RAHMATALLA, R. O et al.Journal of crystal growth. 2009, Vol 311, Num 2, pp 292-297, issn 0022-0248, 6 p.Article
Hydride vapour phase epitaxy growth and characterization of thick GaN using a vertical HVPE reactorHEMMINGSSON, C; PASKOV, P. P; POZINA, G et al.Journal of crystal growth. 2007, Vol 300, Num 1, pp 32-36, issn 0022-0248, 5 p.Conference Paper
Modeling, optimization, and growth of GaN in a vertical halide vapor-phase epitaxy bulk reactorHEMMINGSSON, C; POZINA, G; HEUKEN, M et al.Journal of crystal growth. 2008, Vol 310, Num 5, pp 906-910, issn 0022-0248, 5 p.Conference Paper
Barrier height determination for n-type 4H-SiC schottky contacts made using various metalsYAKIMOVA, R; HEMMINGSSON, C; MACMILLAN, M. F et al.Journal of electronic materials. 1998, Vol 27, Num 7, pp 871-875, issn 0361-5235Article